Intern - Memory Design Engineer, HBM

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Описание

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Description At Micron, we are transforming how the world uses information to enrich life. The High Bandwidth Memory (HBM) Design team develops industry-leading memory solutions that power Artificial Intelligence (AI), high-performance computing, graphics, and data center applications. Our team collaborates across Design, Verification, Physical Design, Product Engineering, and CAD organizations to deliver next-generation memory technologies. As an HBM Design Engineer Intern, you will work alongside experienced engineers on the design, development, and validation of advanced HBM products. This internship provides hands-on experience with semiconductor design methodologies, industry-standard EDA tools, and AI-assisted engineering workflows while contributing to real-world memory design projects in a collaborative global environment. Responsibilities Assist with HBM memory and logic design activities, including RTL development, circuit implementation, simulation, verification, and functional analysis. Develop and use scripting, automation, and AI-assisted workflows to improve design productivity, debug efficiency, and design-flow quality. Perform timing, power, and functional an

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